Physics Essay代写:各种聚合物
Keywords:Physics Essay代写
它已被证明在这篇关于具有与各种聚合物，他们以前只显示活动范围的N沟道FET沟道有机操作无处不在。他们的研究结果也必须与其他相关的情况下，无机氧化物表面被放置在与分子半导体接触。让我们在考虑光伏应用的一个例子，在单分子器件。这些发现提出应开辟有机互补金属氧化物半导体（CMOS）电路的新机遇，其中p型和n型行为的利用。 在这篇文章中表明，一个合适的羟基自由栅介质如divinyltetramethylsiloxane -双（苯并环丁烯）可以使用在大多数的共轭聚合物的N沟道FET的传导率。场效应管的电子迁移率，从而得到揭示，电子是相当多的移动这些材料比以前认为的。对各种聚合物的不同订单的电子迁移率的也都是在不结盟国家。根据计算结果进一步表明，为什么n型行为以前在俘获的电子在半导体电介质界面是由羟基进行如此微妙，因此目前在不同的国家形式中常用的SiO2介质的情况下。 近年来在有机FET的大量研究一直侧重于半导体及其联系人。尽管栅极介电层的重要性，有报道很少报告正在研究实际的栅极电介质系统或电介质半导体接口本身。在最近的一些消息来源已经描述了一个强大的可交联的BCB是有机半导体聚合物可以提供高品质的自由界面。这个BCB可以显示高介电击穿强度比分别为有机半导体其他常用的导电聚合物，也可以是一种为实际低栅极电压塑料晶体管所需的超薄膜溶液浇铸。
Physics Essay代写:各种聚合物
It has been demonstrated in this article about featuring of the ubiquity of n-channel organic FET operation with a variety of range of polymers which they earlier thought to show only p-channel activity. Their findings must also be pertinent to other relevant cases where inorganic oxide surfaces are placed in contact with molecular semiconductors. Let us consider an example in photovoltaic applications, and in single-molecule devices. These findings which are brought up should hence open up new opportunities for organic complementary metal-oxide semiconductor (CMOS) circuits, in which both p-type and n-type behaviours are harnessed.
In this article it is demonstrated that the use of an appropriate hydroxyl-free gate dielectric such as a divinyltetramethylsiloxane - bis (benzocyclobutene) can yield n-channel FET conduction in most of the conjugated polymers. The FET electron mobilities thus obtained reveal that electrons are considerably more mobile in these materials than previously thought. Electron mobility's of different orders for various polymers are also shown which are all in the unaligned state. In accordance it is further shown that the reason why n-type behaviour has formerly been so subtle in the trapping of electrons at the semiconductor dielectric interface which is conducted by hydroxyl groups, thus present in the form of different state in the case of the commonly used SiO2 dielectric.
In recent times a great deal of the research in organic FETs has traditionally focused on the semiconductor and its contacts. In spite of the importance of the gate dielectric, there have been reporting quite few reports which are examining practical gate dielectric systems or the dielectric-semiconductor interface itself. Recently in some sources it has been described that a robust crosslinkable BCB which is a polymer can provide a high-quality hydroxyl-free interface to the organic semiconductor. This BCB can show a high dielectric breakdown strength which is more than other conductive polymers which are in common use for the organic semiconductor, and can also be a solution-cast to form the ultrathin films which are needed for practical low-gate-voltage plastic transistors.
